Dimensions:
5 x 4 x 1.65mm
Maximum Continuous Drain Current:
9.3 A
Transistor Material:
Si
Width:
4mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2V
Package Type:
SOIC
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
6.1 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
970 pF @ 15 V
Length:
5mm
Pin Count:
8
Typical Turn-Off Delay Time:
8.7 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2 W
Series:
OptiMOS
Maximum Gate Source Voltage:
±20 V
Height:
1.65mm
Typical Turn-On Delay Time:
7.3 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
18.2 mΩ
