Dimensions:
5 x 4.1 x 1.1mm
Maximum Continuous Drain Current:
82 A
Transistor Material:
Si
Width:
4.1mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
80 V
Maximum Gate Threshold Voltage:
4V
Package Type:
SOT-669
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
55 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
3640 pF @ 40 V
Length:
5mm
Pin Count:
4
Typical Turn-Off Delay Time:
51 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
130 W
Maximum Gate Source Voltage:
±20 V
Height:
1.1mm
Typical Turn-On Delay Time:
25 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
13.4 mΩ
