Dimensions:
10.3 x 11 x 4.5mm
Maximum Continuous Drain Current:
120 A
Transistor Material:
Si
Width:
11mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
4V
Package Type:
D2PAK
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
137 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
9997 pF @ 30 V
Length:
10.3mm
Pin Count:
3
Typical Turn-Off Delay Time:
115 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
306 W
Maximum Gate Source Voltage:
±20 V
Height:
4.5mm
Typical Turn-On Delay Time:
42 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
3.1 mΩ
