Dimensions:
2.1 x 2.1 x 0.65mm
Maximum Continuous Drain Current:
2.7 A
Transistor Material:
Si
Width:
2.1mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
1V
Package Type:
DFN-2020
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
5.7 nC @ 4.5 V
Channel Type:
P
Typical Input Capacitance @ Vds:
550 pF @ -10 V
Length:
2.1mm
Pin Count:
8
Typical Turn-Off Delay Time:
120 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
6.25 W
Maximum Gate Source Voltage:
±12 V
Height:
0.65mm
Typical Turn-On Delay Time:
6 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
102 mΩ
