NXP BSP250,115 P-channel MOSFET, 3 A, 30 V, 4-Pin SC-73

BSP250 NXP ,115 P-channel MOSFET, 3 A, 30 V, 4-Pin SC-73
BSP250
Nexperia

Product Information

Category:
Power MOSFET
Dimensions:
6.7 x 3.7 x 1.7mm
Maximum Continuous Drain Current:
3 A
Transistor Material:
Si
Width:
3.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.8V
Package Type:
SC-73
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
10 nC @ 10 V
Channel Type:
P
Typical Input Capacitance @ Vds:
250 pF@ 20 V
Length:
6.7mm
Pin Count:
4
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.65 W
Maximum Gate Source Voltage:
±20 V
Height:
1.7mm
Minimum Operating Temperature:
-65 °C
Maximum Drain Source Resistance:
250 mΩ
RoHs Compliant
Checking for live stock

This is NXP 115 P-channel MOSFET 3 A 30 V 4-Pin SC-73 manufactured by Nexperia. The manufacturer part number is BSP250. It is of power mosfet category . The given dimensions of the product include 6.7 x 3.7 x 1.7mm. While 3 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.7mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 2.8v of maximum gate threshold voltage. The package is a sort of sc-73. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 10 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 250 pf@ 20 v . Its accurate length is 6.7mm. It contains 4 pins. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 1.65 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. In addition, the height is 1.7mm. Whereas, the minimum operating temperature of the product is -65 °c. It provides up to 250 mω maximum drain source resistance.

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BSP250, P-Channel Enhancement Mode Vertical DMOS Transistor(Technical Reference)

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