Category:
Power MOSFET
Dimensions:
1.8 x 0.9 x 0.85mm
Maximum Continuous Drain Current:
550 mA
Transistor Material:
Si
Width:
0.9mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
3V
Maximum Drain Source Resistance:
920 mΩ
Package Type:
SC-75
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
1.05 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
23 pF @ 30 V
Length:
1.8mm
Pin Count:
3
Typical Turn-Off Delay Time:
5 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
0.53 W
Maximum Gate Source Voltage:
±20 V
Height:
0.85mm
Typical Turn-On Delay Time:
2 ns
Minimum Operating Temperature:
-55 °C
