Category:
Power MOSFET
Dimensions:
3.3 x 3.3 x 0.725mm
Maximum Continuous Drain Current:
20 A, 60 A
Transistor Material:
Si
Width:
3.3mm
Transistor Configuration:
Series
Maximum Drain Source Voltage:
25 V
Maximum Drain Source Resistance:
2.4 mΩ, 7.3 mΩ
Package Type:
Power 33
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.8V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
19 nC @ 10 V, 64 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1240 pF@ 13 V, 4335 pF@ 13 V
Length:
3.3mm
Pin Count:
8
Typical Turn-Off Delay Time:
20 ns, 38 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.6 W, 2 W
Series:
PowerTrench
Maximum Gate Source Voltage:
12 V
Height:
0.725mm
Typical Turn-On Delay Time:
7 ns, 13 ns
Minimum Operating Temperature:
-55 °C
