Category:
Power MOSFET
Dimensions:
5.99 x 5 x 1.07mm
Maximum Continuous Drain Current:
24 A
Transistor Material:
Si
Width:
5mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
150 V
Package Type:
PowerPAK SO
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
30 nC @ 10 V
Channel Type:
N
Length:
5.99mm
Pin Count:
8
Forward Transconductance:
18S
Typical Turn-Off Delay Time:
22 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.9 W
Series:
TrenchFET
Maximum Gate Source Voltage:
±20 V
Height:
1.07mm
Typical Turn-On Delay Time:
12 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.1V
Maximum Drain Source Resistance:
50 mΩ
