Category:
Power MOSFET
Dimensions:
5 x 6 x 0.81mm
Maximum Continuous Drain Current:
35 A
Width:
6mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.35V
Maximum Drain Source Resistance:
2 mΩ
Package Type:
QFN
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.35V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
37 nC @ 4.5 V, 77 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
5114 pF @ 15 V
Length:
5mm
Pin Count:
8
Typical Turn-Off Delay Time:
22 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
3.6 W
Series:
HEXFET
Maximum Gate Source Voltage:
±20 V
Height:
0.81mm
Typical Turn-On Delay Time:
21 ns
Minimum Operating Temperature:
-55 °C
