Infineon IRF7380PBF Dual N-channel MOSFET, 3.6 A, 80 V HEXFET, 8-Pin SOIC

IRF7380PBF Infineon  Dual N-channel MOSFET, 3.6 A, 80 V HEXFET, 8-Pin SOIC
IRF7380PBF
IRF7380PBF
ET14041425
ET14041425
Unclassified
Unclassified
Infineon

Product Information

Category:
Power MOSFET
Dimensions:
5 x 4 x 1.5mm
Maximum Continuous Drain Current:
3.6 A
Transistor Material:
Si
Width:
4mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
80 V
Maximum Gate Threshold Voltage:
4V
Package Type:
SOIC
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
15 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
660 pF @ 25 V
Length:
5mm
Pin Count:
8
Typical Turn-Off Delay Time:
41 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.5mm
Typical Turn-On Delay Time:
9 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
73 mΩ
RoHs Compliant
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This is Dual N-channel MOSFET 3.6 A 80 V HEXFET 8-Pin SOIC manufactured by Infineon. The manufacturer part number is IRF7380PBF. It is of power mosfet category . The given dimensions of the product include 5 x 4 x 1.5mm. While 3.6 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4mm wide. The product offers isolated transistor configuration. It has a maximum of 80 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of soic. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 15 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 660 pf @ 25 v . Its accurate length is 5mm. It contains 8 pins. Whereas, its typical turn-off delay time is about 41 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 2 w maximum power dissipation. The product hexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.5mm. In addition, it has a typical 9 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 73 mω maximum drain source resistance.

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IRF7380TRPBF HEXFET Power MOSFET Data Sheet(Technical Reference)

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You will get a confirmation email regarding your order of Infineon IRF7380PBF Dual N-channel MOSFET, 3.6 A, 80 V HEXFET, 8-Pin SOIC. You can also check on our website or by contacting our customer support team for further order details on Infineon IRF7380PBF Dual N-channel MOSFET, 3.6 A, 80 V HEXFET, 8-Pin SOIC.
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Yes. We ship IRF7380PBF Internationally to many countries around the world.