Dimensions:
2 x 1.7 x 0.77mm
Maximum Continuous Drain Current:
2 A
Transistor Material:
Si
Width:
1.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
12 V
Maximum Gate Threshold Voltage:
1V
Package Type:
TUMT
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
6.5 nC @ 4.5 V
Channel Type:
P
Typical Input Capacitance @ Vds:
770 pF @ -6 V
Length:
2mm
Pin Count:
3
Typical Turn-Off Delay Time:
65 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
0.8 W
Maximum Gate Source Voltage:
±10 V
Height:
0.77mm
Typical Turn-On Delay Time:
10 ns
Maximum Drain Source Resistance:
440 mΩ
