Dimensions:
6.73 x 6.22 x 2.39mm
Maximum Continuous Drain Current:
10.2 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
250 V
Maximum Gate Threshold Voltage:
4V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
20 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
741 pF @ 25 V
Length:
6.73mm
Pin Count:
3
Forward Transconductance:
8.5S
Typical Turn-Off Delay Time:
44 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
69.4 W
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
2.39mm
Typical Turn-On Delay Time:
13 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.4V
Maximum Drain Source Resistance:
280 mΩ
