Category:
Power MOSFET
Dimensions:
1.7 x 1.3 x 0.6mm
Maximum Continuous Drain Current:
550 mA
Transistor Material:
Si
Width:
1.3mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
0.95V
Package Type:
SOT-666
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
0.45 nC @ 4.5 V, 0.76 nC @ 4.5 V
Channel Type:
N, P
Typical Input Capacitance @ Vds:
55 pF@ 10 V, 58 pF@ 10 V
Length:
1.7mm
Pin Count:
6
Typical Turn-Off Delay Time:
80 ns, 86 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
0.39 W
Maximum Gate Source Voltage:
8 V
Height:
0.6mm
Typical Turn-On Delay Time:
18 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
380 mΩ, 850 mΩ
