Dimensions:
1.7 x 1.3 x 0.6mm
Maximum Continuous Drain Current:
220 mA, 400 mA
Transistor Material:
Si
Width:
1.3mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
1.1V
Package Type:
SOT-666
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.6V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
0.52 nC @ 4.5 V, 0.55 nC @ 4.5 V
Channel Type:
N, P
Typical Input Capacitance @ Vds:
31 pF@ -15 V, 34 pF@ 15 V
Length:
1.7mm
Pin Count:
6
Typical Turn-Off Delay Time:
130 ns, 138 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
0.5 W
Maximum Gate Source Voltage:
±8 V
Height:
0.6mm
Typical Turn-On Delay Time:
30 (N) ns, 38 (P) ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
2.8 Ω, 7.8 Ω
