Category:
Power MOSFET
Dimensions:
2 x 2 x 0.75mm
Maximum Continuous Drain Current:
3 A
Transistor Material:
Si
Width:
2mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
1.3V
Maximum Drain Source Resistance:
240 mΩ
Package Type:
MLP
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
4 nC @ 10 V
Channel Type:
P
Typical Input Capacitance @ Vds:
435 pF @ -10 V
Length:
2mm
Pin Count:
6
Typical Turn-Off Delay Time:
15 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.4 W
Series:
PowerTrench
Maximum Gate Source Voltage:
±8 V
Height:
0.75mm
Typical Turn-On Delay Time:
9 ns
Minimum Operating Temperature:
-55 °C