Category:
Power MOSFET
Dimensions:
4.5 x 3.1 x 1.05mm
Maximum Continuous Drain Current:
5.2 A
Transistor Material:
Si
Width:
3.1mm
Transistor Configuration:
Common Drain
Maximum Drain Source Voltage:
20 V
Package Type:
TSSOP
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.6V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
12 nC @ 4.5 V
Channel Type:
N
Length:
4.5mm
Pin Count:
8
Forward Transconductance:
30S
Typical Turn-Off Delay Time:
860 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1 W
Series:
TrenchFET
Maximum Gate Source Voltage:
±12 V
Height:
1.05mm
Typical Turn-On Delay Time:
245 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
30 mΩ
