Dimensions:
10.67 x 4.83 x 16.51mm
Maximum Continuous Drain Current:
175 A
Transistor Material:
Si
Width:
4.83mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
80 V
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
3.4 mΩ
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
105 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
7200 pF @ 40 V
Length:
10.67mm
Pin Count:
3
Forward Transconductance:
90S
Typical Turn-Off Delay Time:
48 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
209 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
16.51mm
Typical Turn-On Delay Time:
31 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
