Category:
Power MOSFET
Dimensions:
6.73 x 6.22 x 2.38mm
Maximum Continuous Drain Current:
6.5 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Package Type:
TO-252
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
2.7 nC @ 5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
240 pF@ 25 V
Length:
6.73mm
Pin Count:
3
Typical Turn-Off Delay Time:
8 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.5 W
Maximum Gate Source Voltage:
±20 V
Height:
2.38mm
Typical Turn-On Delay Time:
7 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
200 mΩ
