Category:
Power MOSFET
Dimensions:
10.63 x 4.83 x 9.8mm
Maximum Continuous Drain Current:
18 A
Transistor Material:
Si
Width:
4.83mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
500 V
Package Type:
TO-220FP
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
38 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1500 pF@ 100 V
Length:
10.63mm
Pin Count:
3
Typical Turn-Off Delay Time:
36 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
39 W
Series:
D Series
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
9.8mm
Typical Turn-On Delay Time:
19 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
280 mΩ
