Category:
Power MOSFET
Dimensions:
3 x 1.75 x 1.3mm
Maximum Continuous Drain Current:
3.5 A
Transistor Material:
Si
Width:
1.75mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Drain Source Resistance:
800 mΩ
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
4 nC @ 5 V, 5.8 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
459 pF@ 40 V
Length:
3mm
Pin Count:
6
Typical Turn-Off Delay Time:
12.3 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.7 W
Maximum Gate Source Voltage:
±20 V
Height:
1.3mm
Typical Turn-On Delay Time:
2.6 ns
Minimum Operating Temperature:
-55 °C
