Category:
Power MOSFET
Dimensions:
6.73 x 6.22 x 2.39mm
Maximum Continuous Drain Current:
3.5 A
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
450 mΩ
Package Type:
TO-252
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
5.4 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
274 pF @ 50 V
Length:
6.73mm
Pin Count:
4
Typical Turn-Off Delay Time:
7.4 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
3.9 W
Maximum Gate Source Voltage:
±20 V
Height:
2.39mm
Typical Turn-On Delay Time:
2.7 ns
Minimum Operating Temperature:
-55 °C
