Category:
Power MOSFET
Dimensions:
2.55 x 2.35 x 0.58mm
Maximum Continuous Drain Current:
6 A
Transistor Material:
Si
Width:
2.35mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
1.2V
Package Type:
U-DFN2523
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
113 nC @ 10 V
Channel Type:
P
Typical Input Capacitance @ Vds:
4748 pF @ -10 V
Length:
2.55mm
Pin Count:
6
Typical Turn-Off Delay Time:
240.8 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.1 W
Maximum Gate Source Voltage:
±12 V
Height:
0.58mm
Typical Turn-On Delay Time:
22.8 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
25 mΩ
