Dimensions:
3.05 x 3.05 x 0.8mm
Maximum Continuous Drain Current:
2.9 A, 3.9 A
Transistor Material:
Si
Width:
3.05mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
3V
Package Type:
POWERDI3030
Number of Elements per Chip:
2
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
11.5 nC @ 10 V
Channel Type:
N, P
Typical Input Capacitance @ Vds:
731 pF @ 20 V
Length:
3.05mm
Pin Count:
8
Typical Turn-Off Delay Time:
61 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.4 W
Maximum Gate Source Voltage:
±20 V
Height:
0.8mm
Typical Turn-On Delay Time:
9.6 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
120 mΩ
