Category:
Power MOSFET
Dimensions:
9.9 x 9.2 x 4.5mm
Maximum Continuous Drain Current:
15.6 A
Transistor Material:
Si
Width:
9.2mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Package Type:
D2PAK
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
40 nC @ 10 V
Channel Type:
P
Typical Input Capacitance @ Vds:
1170 pF @ -25 V
Length:
9.9mm
Pin Count:
3
Typical Turn-Off Delay Time:
60 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
125 W
Maximum Gate Source Voltage:
±30 V
Height:
4.5mm
Typical Turn-On Delay Time:
17 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
125 mΩ
