Category:
Power MOSFET
Dimensions:
3 x 1.7 x 1mm
Maximum Continuous Drain Current:
220 mA
Transistor Material:
Si
Width:
1.7mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
25 V
Maximum Drain Source Resistance:
9 Ω
Package Type:
SOT-23
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.65V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
0.49 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
9.5 pF @ 10 V
Length:
3mm
Pin Count:
6
Typical Turn-Off Delay Time:
4 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
900 mW
Maximum Gate Source Voltage:
+8 V
Height:
1mm
Typical Turn-On Delay Time:
5 ns
Minimum Operating Temperature:
-55 °C
