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Fairchild FDC6301N Dual N-channel MOSFET, 220 mA, 25 V, 6-Pin SOT-23

FDC6301N Fairchild  Dual N-channel MOSFET, 220 mA, 25 V, 6-Pin SOT-23
FDC6301N
Fairchild Semiconductor

Product Information

Category:
Power MOSFET
Dimensions:
3 x 1.7 x 1mm
Maximum Continuous Drain Current:
220 mA
Transistor Material:
Si
Width:
1.7mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
25 V
Maximum Drain Source Resistance:
9 Ω
Package Type:
SOT-23
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.65V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
0.49 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
9.5 pF @ 10 V
Length:
3mm
Pin Count:
6
Typical Turn-Off Delay Time:
4 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
900 mW
Maximum Gate Source Voltage:
+8 V
Height:
1mm
Typical Turn-On Delay Time:
5 ns
Minimum Operating Temperature:
-55 °C
RoHs Compliant
Checking for live stock

This is Fairchild Dual N-channel MOSFET 220 mA 25 V 6-Pin SOT-23 manufactured by Fairchild Semiconductor. The manufacturer part number is FDC6301N. It is of power mosfet category . The given dimensions of the product include 3 x 1.7 x 1mm. While 220 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.7mm wide. The product offers isolated transistor configuration. It has a maximum of 25 v drain source voltage. It provides up to 9 ω maximum drain source resistance. The package is a sort of sot-23. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 0.65v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 0.49 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 9.5 pf @ 10 v . Its accurate length is 3mm. It contains 6 pins. Whereas, its typical turn-off delay time is about 4 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 900 mw maximum power dissipation. It features a maximum gate source voltage of +8 v. In addition, the height is 1mm. In addition, it has a typical 5 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c.

pdf icon
MOSFET N Channel 25V 6 Pin SuperSOT(Technical Reference)
pdf icon
ESD Control Selection Guide V1(Technical Reference)

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