Category:
Power MOSFET
Dimensions:
10.16 x 4.45 x 15.1mm
Maximum Continuous Drain Current:
112 A
Transistor Material:
Si
Width:
4.45mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
120 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
69 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
4200 pF @ 60 V
Length:
10.16mm
Pin Count:
3
Typical Turn-Off Delay Time:
73 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
168 W
Series:
TK
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
15.1mm
Typical Turn-On Delay Time:
45 ns
Maximum Drain Source Resistance:
7 mΩ
