Category:
Power MOSFET
Dimensions:
3.3 x 3.3 x 1.07mm
Maximum Continuous Drain Current:
12.5 A
Transistor Material:
Si
Width:
3.3mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
20 V
Package Type:
PowerPAK 1212
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
0.6V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
17.5 nC @ 4.5 V
Channel Type:
N
Length:
3.3mm
Pin Count:
8
Forward Transconductance:
105S
Typical Turn-Off Delay Time:
50 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.5 W
Maximum Gate Source Voltage:
±12 V
Height:
1.07mm
Typical Turn-On Delay Time:
25 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
9.8 mΩ
