Category:
Power MOSFET
Dimensions:
5 x 4 x 1.55mm
Maximum Continuous Drain Current:
3.7 A, 7.2 A
Transistor Material:
Si
Width:
4mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
20 V
Maximum Drain Source Resistance:
14 mΩ, 50 mΩ
Package Type:
SOIC
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.6V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
11.5 nC @ 10 V, 17 nC @ 10 V
Channel Type:
N, P
Length:
5mm
Pin Count:
8
Typical Turn-Off Delay Time:
55 ns, 70 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.1 W
Maximum Gate Source Voltage:
±12 (P-Channel) V, ±16 (N-Channel) V
Height:
1.55mm
Typical Turn-On Delay Time:
12 (N) ns, 25 (P) ns
Minimum Operating Temperature:
-55 °C
