Category:
Power MOSFET
Dimensions:
6.73 x 2.38 x 6.22mm
Maximum Continuous Drain Current:
4.8 A
Transistor Material:
Si
Width:
2.38mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
200 V
Package Type:
IPAK
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
14 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
260 pF@ 25 V
Length:
6.73mm
Pin Count:
3
Typical Turn-Off Delay Time:
19 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.5 W
Maximum Gate Source Voltage:
±20 V
Height:
6.22mm
Typical Turn-On Delay Time:
7.2 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
800 mΩ
