Category:
Power MOSFET
Maximum Continuous Drain Current:
1.7 A
Transistor Material:
Si
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Package Type:
TO-220FP
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
18 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
350 pF @ 25 V
Pin Count:
3
Typical Turn-Off Delay Time:
30 ns
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
30 W
Maximum Gate Source Voltage:
±20 V
Height:
9.8mm
Typical Turn-On Delay Time:
10 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
4.4 Ω
