Category:
Power MOSFET
Dimensions:
3 x 1.8 x 0.95mm
Maximum Continuous Drain Current:
3 A
Transistor Material:
Si
Width:
1.8mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.5V
Package Type:
TSMT
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
12 nC @ 10 V
Channel Type:
P
Typical Input Capacitance @ Vds:
480 pF @ -10 V
Length:
3mm
Pin Count:
6
Typical Turn-Off Delay Time:
50 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.25 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.95mm
Typical Turn-On Delay Time:
7 ns
Maximum Drain Source Resistance:
125 mΩ
