Dimensions:
3.2 x 3.2 x 0.8mm
Maximum Continuous Drain Current:
42 A
Transistor Material:
Si
Width:
3.2mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.7V
Package Type:
PowerDFN33
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
15.9 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1019 pF @ 15 V
Length:
3.2mm
Pin Count:
8
Forward Transconductance:
19S
Typical Turn-Off Delay Time:
25.1 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
25.2 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.8mm
Typical Turn-On Delay Time:
7.5 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.1V
Maximum Drain Source Resistance:
11.7 mΩ
