Category:
Power MOSFET
Dimensions:
39.95 x 26.67 x 7.87mm
Maximum Continuous Drain Current:
18 A
Transistor Material:
Si
Width:
26.67mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-3
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
60 nC @ 10 V
Channel Type:
P
Typical Input Capacitance @ Vds:
1400 pF @ -25 V
Length:
39.95mm
Pin Count:
3
Typical Turn-Off Delay Time:
85 ns
Mounting Type:
Through Hole
Maximum Power Dissipation:
125 W
Maximum Gate Source Voltage:
±20 V
Height:
7.87mm
Typical Turn-On Delay Time:
35 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
200 mΩ
