Category:
Power MOSFET
Dimensions:
5.2 x 4.05 x 1.6mm
Maximum Continuous Drain Current:
630 mA
Transistor Material:
Si
Width:
4.05mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
4V
Package Type:
SC-87
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
12 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
310 pF @ 10 V
Length:
5.2mm
Pin Count:
8
Typical Turn-Off Delay Time:
65 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2 W
Maximum Gate Source Voltage:
±30 V
Height:
1.6mm
Typical Turn-On Delay Time:
25 ns
Maximum Drain Source Resistance:
5 Ω
