HY Electronic Corp HYG15P120B1K1, 3 Phase Bridge IGBT Module, 20 A max, 1200 V, Through Hole

HYG15P120B1K1 HY Electronic Corp , 3 Phase Bridge IGBT Module, 20 A max, 1200 V, Through Hole
HY Electronic Corp

Product Information

Configuration:
3 Phase Bridge
Dimensions:
66 x 32.5 x 17.5mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
156 W
Maximum Continuous Collector Current:
20 A
Maximum Collector Emitter Voltage:
1200 V
Height:
17.5mm
Width:
32.5mm
Length:
66mm
Maximum Gate Emitter Voltage:
±20V
Minimum Operating Temperature:
-40 °C
Channel Type:
N
Maximum Operating Temperature:
+125 °C
Pin Count:
23
Transistor Configuration:
3 Phase
RoHs Compliant
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This is 3 Phase Bridge IGBT Module 20 A max 1200 V Through Hole manufactured by HY Electronic Corp. The manufacturer part number is HYG15P120B1K1. The product is available in 3 phase bridge configuration. The given dimensions of the product include 66 x 32.5 x 17.5mm. The product is available in through hole configuration. Provides up to 156 w maximum power dissipation. The product has a maximum 20 a continuous collector current . Whereas features a 1200 v of collector emitter voltage (max). In addition, the height is 17.5mm. Furthermore, the product is 32.5mm wide. Its accurate length is 66mm. It offers a maximum ±20v gate emitter voltage . Whereas, the minimum operating temperature of the product is -40 °c. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +125 °c. It contains 23 pins. The product offers 3 phase transistor configuration.

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Datasheet(Technical Reference)

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