Category:
Power MOSFET
Dimensions:
6.15 x 5.1 x 1.17mm
Maximum Continuous Drain Current:
68 A
Transistor Material:
Si
Width:
5.1mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
75 V
Maximum Gate Threshold Voltage:
3.7V
Package Type:
PQFN
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
75 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
4030 pF @ 25 V
Length:
6.15mm
Pin Count:
8
Forward Transconductance:
110S
Typical Turn-Off Delay Time:
53 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
83 W
Series:
HEXFET
Maximum Gate Source Voltage:
±20 V
Height:
1.17mm
Typical Turn-On Delay Time:
7.3 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
8 mΩ
