Category:
Power MOSFET
Dimensions:
10.54 x 4.69 x 8.77mm
Maximum Continuous Drain Current:
41 A
Transistor Material:
Si
Width:
4.69mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
150 V
Package Type:
TO-220FP
Number of Elements per Chip:
1
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
72 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2520 pF @ 25 V
Length:
10.54mm
Pin Count:
3
Forward Transconductance:
18S
Typical Turn-Off Delay Time:
25 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
48 W
Series:
HEXFET
Maximum Gate Source Voltage:
±30 V
Height:
8.77mm
Typical Turn-On Delay Time:
16 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.3V
Maximum Drain Source Resistance:
40 mΩ
