Category:
Power MOSFET
Dimensions:
6.73 x 2.39 x 6.22mm
Maximum Continuous Drain Current:
71 A
Width:
2.39mm
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
3.7V
Maximum Drain Source Resistance:
7.9 mΩ
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
58 nC @ 20 V
Channel Type:
N
Typical Input Capacitance @ Vds:
3020 pF @ 25 V
Length:
6.73mm
Pin Count:
3
Forward Transconductance:
56S
Typical Turn-Off Delay Time:
36 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
99 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
6.22mm
Typical Turn-On Delay Time:
8.1 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
