Category:
Power MOSFET
Dimensions:
10.67 x 4.83 x 11.3mm
Maximum Continuous Drain Current:
180 A
Transistor Material:
Si
Width:
4.83mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
3.7 mΩ
Package Type:
I2PAK (TO-262)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
100 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
4340 pF @ 25 V
Length:
10.67mm
Pin Count:
3
Typical Turn-Off Delay Time:
36 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
200 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
11.3mm
Typical Turn-On Delay Time:
18 ns
Minimum Operating Temperature:
-55 °C
