Category:
Power MOSFET
Dimensions:
6.35 x 5.05 x 0.53mm
Maximum Continuous Drain Current:
90 A
Transistor Material:
Si
Width:
5.05mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Package Type:
WDSON
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
108 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
8800 pF @ 30 V
Length:
6.35mm
Pin Count:
7
Forward Transconductance:
83S
Typical Turn-Off Delay Time:
38 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
78 W
Series:
OptiMOS 3
Maximum Gate Source Voltage:
±20 V
Height:
0.53mm
Typical Turn-On Delay Time:
21 ns
Minimum Operating Temperature:
-40 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
2.8 mΩ
