Category:
Power MOSFET
Dimensions:
2.9 x 1.6 x 1mm
Maximum Continuous Drain Current:
2 A
Transistor Material:
Si
Width:
1.6mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
1V
Package Type:
TSOP
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
5 nC @ 10 V
Channel Type:
P
Typical Input Capacitance @ Vds:
376 pF @ -15 V
Length:
2.9mm
Pin Count:
6
Forward Transconductance:
4.6S
Typical Turn-Off Delay Time:
15.3 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
0.5 W
Series:
OptiMOS P
Maximum Gate Source Voltage:
±20 V
Height:
1mm
Typical Turn-On Delay Time:
5.6 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.1V
Maximum Drain Source Resistance:
130 mΩ
