Category:
Power MOSFET
Dimensions:
3.1 x 3.1 x 0.9mm
Maximum Continuous Drain Current:
25 A, 30 A
Transistor Material:
Si
Width:
3.1mm
Transistor Configuration:
Series
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2V
Maximum Drain Source Resistance:
10 mΩ, 13 mΩ
Package Type:
WISON
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
4.3 nC @ 4.5 V, 5.3 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
550 pF@ 15 V, 680 pF@ 15 V
Length:
3.1mm
Pin Count:
8
Typical Turn-Off Delay Time:
17.2 ns, 18.5 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.3 W
Series:
OptiMOS
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.9mm
Typical Turn-On Delay Time:
6 ns, 6.2 ns
Minimum Operating Temperature:
-55 °C
