Category:
Power MOSFET
Dimensions:
10.36 x 4.572 x 9.45mm
Maximum Continuous Drain Current:
56 A
Transistor Material:
Si
Width:
4.572mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
120 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-262
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
37 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
2420 pF @ 60 V
Length:
10.36mm
Pin Count:
3
Forward Transconductance:
62S
Typical Turn-Off Delay Time:
24 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
107 W
Series:
OptiMOS 3
Maximum Gate Source Voltage:
±20 V
Height:
9.45mm
Typical Turn-On Delay Time:
16 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
14.7 mΩ
