Category:
Power MOSFET
Dimensions:
6.73 x 2.41 x 6.22mm
Maximum Continuous Drain Current:
2.4 A
Transistor Material:
Si
Width:
2.41mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
550 V
Maximum Gate Threshold Voltage:
3.5V
Maximum Drain Source Resistance:
2 Ω
Package Type:
IPAK (TO-251)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
6 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
124 pF @ 100 V
Length:
6.73mm
Pin Count:
3
Typical Turn-Off Delay Time:
21 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
22.3 W
Series:
CoolMOS CE
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
6.22mm
Typical Turn-On Delay Time:
5 ns
Minimum Operating Temperature:
-55 °C
