Infineon IPU80R2K8CEBKMA1 N-channel MOSFET, 1.9 A, 800 V CoolMOS CE, 3-Pin TO-251

IPU80R2K8CEBKMA1 Infineon  N-channel MOSFET, 1.9 A, 800 V CoolMOS CE, 3-Pin TO-251
Infineon

Product Information

Category:
Power MOSFET
Dimensions:
6.73 x 2.41 x 6.22mm
Maximum Continuous Drain Current:
1.9 A
Transistor Material:
Si
Width:
2.41mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
800 V
Maximum Gate Threshold Voltage:
3.9V
Maximum Drain Source Resistance:
2.8 Ω
Package Type:
TO-251
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
12 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
290 pF @ 100 V
Length:
6.73mm
Pin Count:
3
Typical Turn-Off Delay Time:
72 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
42 W
Series:
CoolMOS CE
Maximum Gate Source Voltage:
±30 V
Height:
6.22mm
Typical Turn-On Delay Time:
25 ns
Minimum Operating Temperature:
-55 °C
RoHs Compliant
Checking for live stock

This is N-channel MOSFET 1.9 A 800 V CoolMOS CE 3-Pin TO-251 manufactured by Infineon. The manufacturer part number is IPU80R2K8CEBKMA1. It is of power mosfet category . The given dimensions of the product include 6.73 x 2.41 x 6.22mm. While 1.9 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 2.41mm wide. The product offers single transistor configuration. It has a maximum of 800 v drain source voltage. The product carries 3.9v of maximum gate threshold voltage. It provides up to 2.8 ω maximum drain source resistance. The package is a sort of to-251. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 12 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 290 pf @ 100 v . Its accurate length is 6.73mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 72 ns . The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 42 w maximum power dissipation. The product coolmos ce, is a highly preferred choice for users. It features a maximum gate source voltage of ±30 v. In addition, the height is 6.22mm. In addition, it has a typical 25 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c.

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800V CooLMOS™ CE Power Transistor(Technical Reference)

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