Category:
Power MOSFET
Dimensions:
15.9 x 5.3 x 20.95mm
Maximum Continuous Drain Current:
47 A
Transistor Material:
Si
Width:
5.3mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
3.9V
Package Type:
TO-247
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
252 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
6800 pF@ 25 V
Length:
15.9mm
Pin Count:
3
Typical Turn-Off Delay Time:
111 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
415 W
Series:
CoolMOS C3
Maximum Gate Source Voltage:
±20 V
Height:
20.95mm
Typical Turn-On Delay Time:
18 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
70 mΩ
