Toshiba 2SK4021(Q) N-channel MOSFET, 4.5 A, 250 V, 3-Pin PW Mold2

2SK4021-Q- Toshiba 2SK4021(Q) N-channel MOSFET, 4.5 A, 250 V, 3-Pin PW Mold2
2SK4021(Q)
Toshiba

Product Information

Category:
Power MOSFET
Dimensions:
6.5 x 2.3 x 5.5mm
Maximum Continuous Drain Current:
4.5 A
Transistor Material:
Si
Width:
2.3mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
250 V
Maximum Gate Threshold Voltage:
3.5V
Package Type:
PW Mold2
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
10 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
440 pF@ 10 V
Length:
6.5mm
Pin Count:
3
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
20 W
Maximum Gate Source Voltage:
±20 V
Height:
5.5mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
1 Ω
RoHs Compliant
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This is N-channel MOSFET 4.5 A 250 V 3-Pin PW Mold2 manufactured by Toshiba. The manufacturer part number is 2SK4021(Q). It is of power mosfet category . The given dimensions of the product include 6.5 x 2.3 x 5.5mm. While 4.5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 2.3mm wide. The product offers single transistor configuration. It has a maximum of 250 v drain source voltage. The product carries 3.5v of maximum gate threshold voltage. The package is a sort of pw mold2. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 10 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 440 pf@ 10 v . Its accurate length is 6.5mm. It contains 3 pins. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 20 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. In addition, the height is 5.5mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 1 ω maximum drain source resistance.

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Datasheet(Technical Reference)

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