Category:
Power MOSFET
Dimensions:
10.67 x 9.65 x 4.83mm
Maximum Continuous Drain Current:
5.4 A
Transistor Material:
Si
Width:
9.65mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
900 V
Package Type:
D2PAK
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
31 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1200 pF @ 25 V
Length:
10.67mm
Pin Count:
3
Typical Turn-Off Delay Time:
65 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
158 W
Series:
QFET
Maximum Gate Source Voltage:
±30 V
Height:
4.83mm
Typical Turn-On Delay Time:
28 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
2.3 Ω
