Category:
Power MOSFET
Dimensions:
5 x 5.9 x 1.1mm
Maximum Continuous Drain Current:
60 A
Transistor Material:
Si
Width:
5.9mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
3V
Package Type:
Power 56
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
64 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
3695 pF @ 30 V
Length:
5mm
Pin Count:
8
Typical Turn-Off Delay Time:
79 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
150 W
Series:
PowerTrench
Maximum Gate Source Voltage:
±20 V
Height:
1.1mm
Typical Turn-On Delay Time:
22 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
21.6 mΩ
