Dimensions:
4.9 x 3.9 x 1.575mm
Maximum Continuous Drain Current:
2.9 A
Transistor Material:
Si
Width:
3.9mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
60 V
Package Type:
SOIC
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
8 nC @ 4.5 V, 16 nC @ 10 V
Channel Type:
P
Typical Input Capacitance @ Vds:
765 pF @ -30 V
Length:
4.9mm
Pin Count:
8
Typical Turn-Off Delay Time:
27 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2 W
Maximum Gate Source Voltage:
±20 V
Height:
1.575mm
Typical Turn-On Delay Time:
6 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
190 mΩ
